鈥?/div>
TR : NPN Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon MOSFET
Switching, Flash Applications
Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.
Ultrasmall package permitting applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
[FET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW鈮?0碌s, duty cycle鈮?%
30
鹵10
150
600
0.25
150
--55 to +150
V
V
mA
mA
W
擄C
擄C
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (900mm
2
!0.8mm)
1unit
100
50
6
5
8
1.1
150
--55 to +150
V
V
V
A
A
W
擄C
擄C
Symbol
Conditions
Ratings
Unit
Electrical Characteristics
at Ta=25擄C
Parameter
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
IC=1.6A, IB=53mA
IC=2A, IB=40mA
250
330
26
55
75
110
150
100
100
400
MHz
pF
mV
mV
nA
nA
Symbol
Conditions
Ratings
min
typ
max
Unit
Marking : AA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12505EA TS IM TB-00001130 No.8198-1/6
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