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VE28F008 Datasheet

  • VE28F008

  • 8 MBIT (1 MBIT x 8) FLASH MEMORY

  • 26頁(yè)

  • INTEL   INTEL

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VE28F008
8 MBIT (1 MBIT x 8) FLASH MEMORY
Y
High-Density Symmetrically Blocked
Architecture
Sixteen 64 Kbyte Blocks
Avionics Temperature Range
b
40 C to
a
125 C
Extended Cycling Capability
10K Block Erase Cycles
160K Block Erase
Cycles per Chip
Automated Byte Write and Block Erase
Command User Interface
Status Register
Y
Very High-Performance Read
95 ns Maximum Access Time
SRAM-Compatible Write Interface
Hardware Data Protection Feature
Erase Write Lockout during Power
Transitions
Industry Standard Packaging
40-Lead TSOP
ETOX
TM
III Nonvolatile Flash
Technology
12V Byte Write Block Erase
Independent Software Vendor Support
Microsoft Flash File System (FFS)
Y
Y
Y
Y
Y
Y
Y
Y
Y
System Performance Enhancements
RY BY Status Output
Erase Suspend Capability
Intel鈥檚 VE28F008 8-Mbit Flash File
TM
Memory revolutionizes the design of high performance and durable
mass storage memory systems for the Industrial Avionics and Military markets With its innovative features
like low power blocked architecture high read write performance and expanded temperature range any
design or mission is free from the dependence on battery backed up memory or highly sensitive and slow
rotating media drives
Using the VE28F008 in a PCMCIA 2 1 Flash Memory card ATA drive or any size or shape module will allow
data application or operating systems to be updated or collected anywhere and at anytime This data on
demand feature ensures protection from obsolesce through field or in system software updates
The VE28F008鈥檚 highly integrated Command User Interface and Write State Machine decreases the size and
complexity of system software while providing high read write and erase performance The sixteen separately
erasable 64 Kbyte blocks along with a multiple write data protection system provides assurance that highly
important data will be available when needed
The VE28F008 is offered in a 40-lead TSOP (Thin Small Outline Package) which is capable of performing in
temperatures from
b
40 C to
a
125 C It employs advanced CMOS circuitry for systems requiring low power
consumption and noise immunity The VE28F008鈥檚 95 ns access time provides superior performance when
compared to magnetic mass storage
Manufactured on Intel鈥檚 0 8 micron ETOX
TM
III process the VE28F008 provides the highest levels of quality
reliability and cost effectiveness
Microsoft is a trademark of Microsoft Corporation
Other brands and names are the property of their respective owners
Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel鈥檚 Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
COPYRIGHT
INTEL CORPORATION 1995
May 1994
Order Number 271305-001

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