VCR2N/4N/7N
Vishay Siliconix
JFET Voltage-Controlled Resistors
PRODUCT SUMMARY
Part Number
VCR2N
VCR4N
VCR7N
V
GS(off)
Max (V)
鈭?
鈭?
鈭?
V
(BR)GSS
Min (V)
鈭?5
鈭?5
鈭?5
r
DS(on)
Max (W)
60
600
8000
FEATURES
D
Continuous Voltage-Controlled
Resistance
D
High Off-Isolation
D
High Input Impedance
BENEFITS
D
Gain Ranging Capability/Wide Range
Signal Attenuation
D
No Circuit Interaction
D
Simplified Drive
APPLICATIONS
D
Variable Gain Amplifiers
D
Voltage Controlled Oscillator
D
AGC
DESCRIPTION
The VCR2N/4N/7N JFET voltage controlled resistors have an
ac drain-source resistance that is controlled by a dc bias
voltage (V
GS
) applied to their high impedance gate terminal.
Minimum r
DS
occurs when V
GS
= 0 V. As V
GS
approaches the
pinch-off voltage, r
DS
rapidly increases. This series of junction
FETs is intended for applications where the drain-source
voltage is a low-level ac signal with no dc component.
Key to device performance is the predictable r
DS
change
versus V
GS
bias where:
r
DS
(@ V
GS
+
0)
r
DS
bias
[
1鈥?V
GS(off)
V
GS
These n-channel devices feature r
DS(on)
ranging from 20 to
8000
W
. All packages are hermetically sealed and may be
processed per MIL-S-19500 (see Military Information).
TO-206AA
(TO-18)
TO-206AF
(TO-72)
S
S
C
1
1
4
2
D
Top View
3
G and Case
D
2
3
G
Top View
VCR7N
VCR2N, VCR4N
For applications information see AN105.
Document Number: 70293
S-41225鈥擱ev. F, 28-Jun-04
www.vishay.com
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