C-8
01/99
VCR2N, VCR4N, VCR7N
N-Channel Silicon Voltage Controlled Resistor JFET
樓
樓
樓
樓
Small Signal Attenuators
Filters
Amplifier Gain Control
Oscillator Amplitude Control
Absolute maximum ratings at T
A
= 25隆C.
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
鈥?15 V
10 mA
300 mW
2.4 mW/擄C
VCR2N
At 25擄C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
r
ds(on)
C
dg
C
sg
20
60
7.5
7.5
V
(BR)GSS
I
GSS
V
GS(OFF)
鈥?
NJ72
Min
鈥?15
鈥?
鈥?3.5
Max
VCR4N
NJ16
Min
鈥?15
鈥?0.2
鈥?3.5
鈥?
Max
Unit
V
nA
V
Process
Test Conditions
I
G
= 鈥?1 碌A(chǔ), V
DS
= 脴V
V
GS
= 鈥?15V, V
DS
= 脴V
I
D
= 鈥?1 碌A(chǔ), V
DS
= 10V
200
600
3
3
鈩?/div>
pF
pF
V
GS
= 脴V, I
D
= 脴A
V
DG
= 10V, I
S
= 脴A
V
DG
= 10V, I
D
= 脴A
f = 1 kHz
f = 1 MHz
f = 1 MHz
VCR7N
At 25擄C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
r
ds(on)
C
dg
C
sg
4000
8000
1.5
1.5
鈩?/div>
pF
pF
V
GS
= 脴V, I
D
= 脴A
V
DG
= 10V, I
S
= 脴A
V
DG
= 10V, I
D
= 脴A
f = 1 kHz
f = 1 MHz
f = 1 MHz
V
(BR)GSS
I
GSS
V
GS(OFF)
鈥?2.5
NJ01
Min
鈥?15
鈥?0.1
鈥?
Max
Unit
V
nA
V
Process
Test Conditions
I
G
= 鈥?1 碌A(chǔ), V
DS
= 脴V
V
GS
= 鈥?15V, V
DS
= 脴V
I
D
= 鈥?1 碌A(chǔ), V
DS
= 10V
VCR2N & VCR4N
TO脨18 Package
See Section G for Outline Dimensions
VCR7N
TO脨72 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
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