= 116 m鈩?/div>
V
RRM
= 1200 V
I
DAV25
= 90 A
Mains Rectifier Bridge D1 - D4
Symbol
V
RRM
I
FAV25
I
FAV80
I
FSM
T
C
= 25擄C; sine 180擄
T
C
= 80擄C; sine 180擄
T
VJ
= 25擄C; t = 10 ms sine 50 Hz
Conditions
Maximum Ratings
1200
45
33
400
V
A
A
A
Application
primary side of mains supplied
鈥?welding converters
鈥?switched mode power supplies
鈥?induction heaters
Features
鈥?H-bridge with
HiPerFET
TM
technology:
- low R
DSon
- unclamped inductive switching
(UIS) capability
- dv/dt ruggedness
- fast intrinsic reverse diode
- Kelvin source for easy drive
- low inductive, symmetrical current
paths
鈥?thermistor for internal temperature
measurement
鈥?package:
- high level of integration - only one
power semiconductor module
required for the whole primary side
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
T
VJ
= 25擄C
T
VJ
= 125擄C
T
VJ
= 25擄C
T
VJ
= 125擄C
1.1
1.0
0.4
2.8
1.2
0.02
V
V
mA
mA
V
F
I
R
R
thJC
R
thJS
I
F
= 20 A
V
R
= V
RRM
(per diode)
with heat transfer paste
1.42 K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2002 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-3
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
206