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V82658B04S Datasheet

  • V82658B04S

  • 64 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 8M x 64

  • 14頁

  • MOSEL

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V82658B04S
64 MB 200-PIN DDR UNBUFFERED SODIMM
2.5 VOLT 8M x 64
PRELIMINARY
CILETIV LESO M
Features
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JEDEC 200 Pin DDR Unbuffered Small-Outline,
Dual In-Line memory module (SODIMM);
8,388,608 x 64 bit organization.
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Utilizes High Performance 8M x 16 DDR
SDRAM in TSOPII-66 Packages
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Single +2.5V (鹵 0.2V) Power Supply
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Programmable CAS Latency, Burst Length, and
Wrap Sequence (Sequential & Interleave)
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Auto Refresh (CBR) and Self Refresh
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All Inputs, Outputs are SSTL-2 Compatible
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4096 Refresh Cycles every 64 ms
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Serial Presence Detect (SPD)
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DDR SDRAM Performance
Component Used
t
CK
t
AC
Clock Frequency
(max.)
Clock Access Time
CAS Latency = 2.5
Description
The V82658B04S memory module is organized
8,388,608 x 64 bits in a 200 pin memory module.
The 8M x 64 memory module uses 4 Mosel-Vitelic
8M x 16 DDR SDRAM. The x64 modules are ideal
for use in high performance computer systems
where increased memory density and fast access
times are required.
-7
143
-75
133
-8
125
Units
MHz
(PC266A) (PC266B) (PC200)
7
7.5
8
ns
Module Speed
A1
B0
B1
PC1600 (100MHz @ CL2)
PC2100B (133MHz @ CL2.5)
PC2100A (133MHz @ CL2)
V82658B04S Rev. 1.2 March 2002
1

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