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V53C832L40 Datasheet

  • V53C832L40

  • HIGH PERFORMANCE 3.3 VOLT 256K X 32 EDO PAGE MODE CMOS DYNAM...

  • 18頁

  • MOSEL

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MOSEL VITELIC
V53C832L
HIGH PERFORMANCE
3.3 VOLT 256K X 32 EDO PAGE MODE
CMOS DYNAMIC RAM
PRELIMINARY
HIGH PERFORMANCE
Max. RAS Access Time, (t
RAC
)
Max. Column Address Access Time, (t
CAA
)
Min. Extended Data Out Page Mode Cycle Time, (t
PC
)
Min. Read/Write Cycle Time, (t
RC
)
30
30 ns
16 ns
12 ns
65 ns
35
35 ns
18 ns
14 ns
70 ns
40
40 ns
20 ns
15 ns
75 ns
Features
s
256K x 32-bit organization
s
EDO Page Mode for a sustained data rate of
83 MHz
s
RAS access time: 30, 35, 40 ns
s
Four CAS Inputs for Byte Read and Byte Write
Control
s
Low power dissipation
s
Read-Modify-Write, RAS-Only Refresh,
CAS-Before-RAS Refresh
s
Refresh Interval: 512 cycles/8 ms
s
Available in 100-pin PQFP and 100-pin LQFP
packages
s
Single +3.3V
鹵
0.3V Power Supply
s
TTL Interface
Description
The V53C832L is a high speed 262,144 x 32 bit
high performance CMOS dynamic random access
memory. The V53C832L offers a combination of
unique features including: EDO Page Mode opera-
tion for higher sustained bandwidth with Page Mode
cycle times as short as 12ns. All inputs are TTL
compatible. Input and output capacitance is signifi-
cantly lowered to increase performance and mini-
mize loading. These features make the V53C832L
ideally suited for a wide variety of high performance
computer systems and peripheral applications.
Device Usage Chart
Operating
Temperature
Range
0擄C to 70擄C
Package Outline
Q
鈥?/div>
TQ
鈥?/div>
30
鈥?/div>
Access Time (ns)
35
鈥?/div>
40
鈥?/div>
Power
Std.
鈥?/div>
Blank
Temperature
Mark
V53C832L Rev. 1.6 August 1999
1

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