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V29LC51001 Datasheet

  • V29LC51001

  • 1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

  • 12頁

  • MOSEL

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MOSEL VITELIC
V29LC51001
1 MEGABIT (131,072 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Description
PRELIMINARY
Features
s
s
s
s
s
128Kx8-bit Organization
Address Access Time: 90 ns
Single 5V
鹵
10% Power Supply
Sector Erase Mode Operation
512 bytes per Sector, 256 Sectors
鈥?Sector-Erase Cycle Time: 10ms (Max)
鈥?Byte-Program Cycle Time: 30
碌
s (Max)
Minimum 1,000 Erase-Program Cycles
Low power dissipation
鈥?Active Read Current: 20mA (Typ)
鈥?Active Program Current: 30mA (Typ)
鈥?Standby Current: 100碌A(chǔ) (Max)
Low V
CC
Program Inhibit Below 3.2V
Self-timed program/erase operations
CMOS and TTL Interface
Packages:
鈥?32-pin Plastic DIP
鈥?32-pin PLCC
s
s
The V29LC51001 is a high speed 131,072 x 8 bit
CMOS flash memory. Programming or erasing the
device is done with a single 5 Volt power supply.
The device has separate chip enable CE, program
enable WE, and output enable OE controls to
eliminate bus contention.
The V29LC51001 features a sector erase
operation which allows each sector to be erased
and reprogrammed without affecting data stored in
other sectors. The device also supports full chip
erase.
s
s
s
s
Device Usage Chart
Operating
Temperature
Range
0擄C to 70擄C
Package Outline
P
鈥?/div>
J
鈥?/div>
Access Time (ns)
90
鈥?/div>
Temperature
Mark
Blank
V29LC51001 Rev. 0.5 October 2000
1

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