UTV8100B
100 Watts Pk, 28 Volt, Class AB
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV8100B is a COMMON EMITTER transistor capable of providing
100 Watt Peak, Class AB, RF Output Power over the band 470 - 860 MHz.
The transistor includes double input and output prematching for full
broadband capability. Gold Metalization and Diffused Ballasting are used to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55RT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVcbo Collector to Emiter Voltage
BVceo Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
290 Watts
65 Volts
30 Volts
3.5 Volts
15 Amps
-40 to + 150
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP
110
14.0
9.5
58
MAX
UNITS
Watts
Watts
Watts
dB
%
Power Out - 1 dB Compression
F =470 - 860 MHz
100
PldB
Power Input
Vcc = 28 Volts
Pin
Power Output - Linear
Icq = 300 mA (total)
25
Po - ref
Pg
Power Gain - Small Sig
8.5
Efficiency
55
畏
Load Mismatch Tolerance
Pout = 25 Watts Pk
5:1
VSWR
* European Test Method, Vision = -8 dB, Sideband = - 16 dB, Sound = - 7 dB
BVceo
BVces
BVebo
Hfe
Cob
R胃jc
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance - (each side)*
Thermal Resistance
Ic = 25 mA
Ic =25 mA
Ie = 30 mA
Vce = 5 V, Ic = 1 A
Vcb = 28V, F=1MHz
Tc = 25
o
C
30
60
3.5
20
Volts
Volts
Volts
120
44
0.6
o
pF
C/W
* Not measureable due to internal prematch network
Issue December 1996
GHz TECHNOLOGY, INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT
THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
Ghz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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