UTV65B
65 Watts Pk, 28 Volts, Class AB
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV65B is a COMMON EMITTER transistor capable of providing 65
Watts Peak, Class AB, RF Output Power over the band 470-860 MHz. The
transistor includes double input and output prematching for full broadband
capability. Gold Metalization and Diffused Ballasting are used to provide
high reliability and supreme ruggedness.
CASE OUTLINE
55RT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVcbo Collector to Emiter Voltage
BVceo Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
175 Watts
50 Volts
28 Volts
4 Volts
10 Amps
-40 to + 150
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Po - Ref
Pin
Pg
Ir
VSWR
CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
Watts
Watts
Watts
dB
%
Power Output - db Compress
F = 470 - 860 MHz
65
Power Output - Linear
F = 470 - 860 MHz
15
Power Input
Vcc = 28 Volts
Power Gain
8.5
Icq = 0.2 Amps
Efficiency
55
Load Mismatch Tolerance
Pout = 15 Watts Pk
5:1
* European Test Method, Vision = -8 dB, Sideband = - 16 dB, Sound = - 7 dB
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance - (each side)*
Thermal Resistance
Ic = 10 mA
Ic = 20 mA
Ie = 10 mA
Vce = 5 V, Ic = 1 A
Vcb = 28V, f= 1MHz
Tc = 25
o
C
28
50
3.5
20
42
2.4
LVceo
BVces
BVebo
Hfe
Cob
胃jc
Volts
Volts
Volts
120
1.0
o
pF
C/W
* Not measureable due to internal prematch network
Initial Issue May 23, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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