UTV120
12 Watts, 26.5 Volts, Class A
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV 120 is a COMMON EMITTER transistor capable of providing 12
Watts Peak, Class A, RF Output Power over the band 470 - 860 MHz. The
transistor includes double input prematching for full broadband capability.
Gold Metalization and Diffused Ballasting are used to provide high reliability
and supreme ruggedness.
CASE OUTLINE
55JT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVceo
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
80 Watts
45 Volts
28 Volts
4 Volts
3.5 Amps
- 65 to + 150
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
IMD
1
VSWR
1
CHARACTERISTICS
Power Out - Pk Sync
Power Input
Power Gain
Intermodulation Distortion
Load Mismatch Tolerance
TEST CONDITIONS
F = 470 - 860 MHz
Vcc = 26.5 Volts
Ic = 1.7 Amps
Pref = 12 Watts
F = 860 MHz
MIN
12
1.55
8.9
9.5
-52
3:1
TYP
MAX
UNITS
Watts
Watts
dB
dB
Collector to Emitter
28
Ic = 65 mA
Breakdown
45
Ic = 25 mA
Collector to Base Breakdown
4
Ie = 10 mA
Emitter to Base Breakdown
10
Vce = 5 V, 500 mA
Current Gain
Vcb = 26 V, F = 1
Output Capacitance
MHz
Thermal Resistance
Tc = 25
o
C
Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz
European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB
Note 2: Per side
Initial Issue June, 1994
LVceo
2
BVces
2
BVebo
2
h
FE2
Cob
2
胃jc
Volts
Volts
Volts
23
1.6
o
pF
C/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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