UTV100B
100 Watts Pk, 28 Volt, Class AB
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV100B is a COMMON EMITTER transistor capable of providing 100
Watt Peak, Class AB, RF Output Power over the band 470 - 860 MHz. The
transistor includes double input and output prematching for full broadband
capability. Gold Metalization and Diffused Ballasting are used to provide
high reliability and supreme ruggedness.
CASE OUTLINE
55RT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVcbo Collector to Emiter Voltage
BVceo Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
290 Watts
65 Volts
30 Volts
3.5 Volts
15 Amps
-40 to + 150
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
Watts
Watts
Watts
dB
%
Power Out - 1 dB Compression
F =470 - 860 MHz
100
PldB
Power Input
Vcc = 28 Volts
Pin
Power Output - Linear
25
Po - ref
Icq = 300 mA (total)
Pg
Power Gain - Small Sig
8.5
Efficiency
55
畏
Load Mismatch Tolerance
Pout = 25 Watts Pk
5:1
VSWR
* European Test Method, Vision = -8 dB, Sideband = - 16 dB, Sound = - 7 dB
Collector to Emitter Breakdown
BVceo
Collector to Emitter Breakdown
BVces
Emitter to Base Breakdown
BVebo
Hfe
Current Gain
Cob
Output Capacitance - (each side)*
Thermal Resistance
R胃jc
* Not measureable due to internal prematch network
Issue August 1996
Ic = 25 mA
Ic =25 mA
Ie = 30 mA
Vce = 5 V, Ic = 1 A
Vcb = 28V, F=1MHz
Tc = 25
o
C
30
60
3.5
20
47
12.5
Volts
Volts
Volts
120
0.6
o
pF
C/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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