UTV080
8 Watts, 26.5 Volts, Class A
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV 080 is a COMMON EMITTER transistor capable of providing 8
Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. The
transistor includes double input prematching for full broadband capability.
Gold Metalization and Diffused Ballasting are used to provide high reliability
and supreme ruggedness.
CASE OUTLINE
55JV, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVceo
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
65 Watts
50 Volts
28 Volts
3.5 Volts
2.5 Amps
- 65 to + 150
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
IMD
1
VSWR
1
LVceo
2
BVces
2
BVebo
2
h
FE2
Cob
2
胃jc
CHARACTERISTICS
Power Out - Pk Sync
Power Input
Power Gain
Intermodulation Distortion
Load Mismatch Tolerance
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
TEST CONDITIONS
F = 470 - 860 MHz
Vcc = 26.5 Volts
Ic = 1.7 Amps
Pref = 8 Watts
F = 860 MHz
Ic = 60 mA
Ic = 20 mA
Ie = 5 mA
Vce = 5 V, 500 mA
Vcb = 26 V, F = 1 MHz
Tc = 25
o
C
MIN
8
1.0
9
10
-58
3:1
28
50
3.5
10
2.5
TYP
MAX
UNITS
Watts
Watts
dB
dB
Volts
Volts
Volts
pF
C/W
o
Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz
European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB
2: Per side
Initial Issue June, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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