XL/ML1225
DESCRIPTION
The XL1225/ML1225 silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts
are intended for low cost high volume applications.
SCR
1
TO-92
1:CATHODE
2:GATE
3:ANODE
ABSOLUTE MAXIMUM RATINGS
( Ta=25擄C ,unless otherwise specified )
PARAMETERS
Repetitive Peak Off-State Voltage
On-State Current
Average On-State Current
Peak Reverse Gate Voltage
Peak Gate Current
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
PART NO. SYMBOL
XL1225
ML1225
V
DRM
V
DRM
IT(RMS)
IT(AV)
VG
RM
IGM
PG(AV)
Tj
T
STG
T
SLD
TEST
CONDITION
Tj=40 to 125擄C
(rgk=1k鈩?
Tc=40擄C
Half Cycle=180,
Tc=40擄C
IGR=10uA
10us Max.
20ms Max.
MIN.
MAX. UNITS
RATING RATING
400
300
0.8
0.5
1
0.1
150
-40
-40
V
A
A
V
A
W
擄C
擄C
擄C
1.6mm from case
10s Max.
125
125
250
ELECTRICAL CHARACTERISTICS
(Ta=25擄C,unless otherwise specified)
PARAMETER
Off state leakage current
Off state leakage current
On state voltage
On state threshold voltage
On state slops resistance
Gate trigger current
Gate trigger voltage
Holding current
Latching current
Critical rate of voltage rise
Critical rate of current rise
Gate controlled delay time
Commutated turn-off time
SYMBOL
IDRM
IDRM
TEST CONDITIONS
@V
DRM(RGK
=1K鈩?, Tj=125擄C
@V
DRM(RGK
=1K鈩?, Tj=25擄C
AT IT=0.4A
AT IT=0.8A
Tj=125擄C
Tj=125擄C
VD=7V
VD=7V
RGK=1K鈩?/div>
RGK=1K鈩?/div>
VD=0.67*VDRM(RGK=1K鈩?,
Tj=125擄C
IG=10mA, dIG/dt=0.1A/碌s,
Tj=125擄C
IG=10mA, dIG/dt=0.1A/碌s,
Tj=85擄C, VD=0.67*VDRM,
VR=35V, IT=IT(AV)
MIN
MAX
0.1
1.0
1. 4
2.2
0.95
600
200
0.8
5
6
UNIT
mA
碌A(chǔ)
V
V
m
碌A(chǔ)
V
mA
mA
V/碌s
A/碌s
VT
VT(TO)
Rt
IGT
VGT
IH
IL
DV/DT
DV/DT
TGD
TG
500
200
碌s
碌s
UTC
UNISONIC TECHNOLOGIES CO. LTD
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