UTC HLB124
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC HLB124 is designed for high voltage, high
speed switching inductive circuits, and amplifier
applications.
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FEATURES
* High Speed Switching
* Low Saturation Voltage
* High Reliability
TO-220
1: BASE
2: COLLECTOR
3: EMITTER
*Pb-free plating product number: HLB124L
ABSOLUTE MAXIMUM RATINGS
(Ta=25鈩?
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (PULSE)
Base Current (DC)
Base Current (PULSE)
Total Power Dissipation (Tc=25鈩?
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
I
CP
I
B
I
BP
Pc
T
J
T
STG
RATINGS
600
400
8
2
4
1
2
35
150
-40 ~ +150
UNIT
V
V
V
A
A
A
A
W
鈩?/div>
鈩?/div>
ELECTRICAL CHARACTERISTICS
(Ta=25鈩? unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE (sat) 1
C-E Saturation Voltage
*V
CE (sat) 2
*V
BE (sat) 1
B-E Saturation Voltage
*V
BE (sat) 2
*h
FE1
DC Current Gain
*h
FE2
*h
FE3
Gain-Bandwidth Product
f
T
*Pulse Test : Pulse Width
鈮?/div>
380碌s, Duty Cycle
鈮?/div>
2%
TEST CONDITIONS
I
C
= 1mA
I
C
= 10mA
I
E
= 1mA
V
CB
= 600V
V
EB
= 9V, I
C
= 0
I
C
= 0.1A, I
B
= 10mA
I
C
= 0.3A, I
B
= 30mA
I
C
= 0.1A, I
B
= 10mA
I
C
= 0.3A, I
B
= 30mA
V
CE
= 5V, I
C
= 0.3A
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 1A
V
CE
= 10V, I
C
= 0.3A, f=1MHz
MIN
600
400
8
TYP MAX UNIT
V
V
V
10
碌A
10
碌A
0.3
V
0.8
V
0.9
V
1.2
V
40
10
10
6
15
MHz
CLASSIFICATION OF HFE1
UTC
UNISONIC TECHNOLOGIES CO., LTD.
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QW-R203-029,A
www.unisonic.com.tw
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