UTC HE8050
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The UTC HE8050 is a low voltage high current small
signal NPN transistor, designed for Class B push-pull 2W
audio amplifier for portable radio and general purpose
applications.
1
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*complimentary to UTC HE8550
TO-92
1:EMITTER
2:COLLECTOR
3: BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25擄C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25擄C
)
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
VALUE
40
25
6
1
1.5
150
-65 ~ +150
UNIT
V
V
V
W
A
擄C
擄C
ELECTRICAL CHARACTERISTICS
(Ta=25擄C, unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(sat)
V
BE
f
T
Cob
Test conditions
Ic=100碌A,I
E
=0
Ic=2mA,I
B
=0
I
E
=100碌A,Ic=0
V
CB
=35V,I
E
=0
V
EB
=6V,Ic=0
V
CE
=1V,Ic=5mA
V
CE
=1V,Ic=100mA
V
CE
=1V,Ic=800mA
Ic=800mA,I
B
=80mA
Ic=800mA,I
B
=80mA
V
CE
=1V,Ic=10mA
V
CE
=10V,Ic=50mA
V
CB
=10V,I
E
=0
f=1MHz
MIN
40
25
6
TYP
MAX
UNIT
V
V
V
nA
nA
100
100
45
85
40
135
160
110
500
0.5
1.2
1.0
100
9.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
V
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-009,A
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