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UTCBT169 Datasheet

  • UTCBT169

  • SCR

  • 39.92KB

  • 4頁

  • UTC-IC

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UTC BT169
SCR
DESCRIPTION
The UTC BT169 is glass passivated, sensitive gate
thyristors in a plastic envelope, intended for use in
general purpose switching and phase control
applications. These devices are intended to be
interfaced directly to microcontrollers, logic integrated
circuits and other low power gate trigger circuits.
1
TO-92
1:CATHODE
2:GATE
3:ANODE
QUICK REFERENCE DATA
PARAMETER
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
SYMBOL
V
DRM
, V
RRM
I
T(AV)
I
T(RMS)
I
TSM
MAX(B)
200
0.5
0.8
8
MAX(D)
400
0.5
0.8
8
MAX(E)
500
0.5
0.8
8
MAX(G)
600
0.5
0.8
8
UNIT
V
A
A
A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak off-state voltages :
SYMBOL
V
DRM
,V
RRM
CONDITIONS
MIN
MAX
B:200
D:400
E:500
G:600
UNIT
V
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
I
T(AV)
I
T(RMS)
I
TSM
Half sine wave;
Tlead<=83擄C
All conduction angles
t=10ms
t=8.3ms
half sine wave;
Tj=25擄C prior to surge
t=10ms
I
TM
=2A;I
G
=10mA;
dI
G
/dt=100mA/碌s
0.5
0.8
8
9
A
A
A
I
2
t for fusing
Repetitive rate of rise of on-state current
after triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
I
2
t
DI
T
/dt
I
GM
V
GM
V
RGM
0.32
50
1
5
5
A
2
S
A/碌s
A
V
V
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1

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