UTC BC337/338
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
*Suitable for AF-Driver stages and low power output
stages
*Complement to BC327/328
1
TO-92
1: COLLECTOR 2: BASE 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
(Ta=25擄C, unless otherwise specified)
PARAMETER
Collector-emitter voltage
: BC337
: BC338
Collector-emitter voltage
: BC337
: BC338
Emitter-base voltage
Collector current (DC)
Collector dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CES
RATING
50
30
UNIT
V
V
V
V
V
mA
mW
擄C
擄C
V
CEO
45
25
5
800
625
150
-55 ~ +150
V
EBO
Ic
Pc
T
j
T
STG
ELECTRICAL CHARACTERISTICS
(Ta=25擄C, unless otherwise specified)
PARAMETER
Collector-emitter breakdown voltage
: BC337
: BC338
Collector-emitter breakdown voltage
: BC337
: BC338
Emitter-base breakdown voltage
Collector Cut-off Current
: BC337
: BC338
DC current gain
Collector-emitter saturation voltage
SYMBOL
BV
CEO
TEST CONDITIONS
Ic=10mA, I
B
=0
MIN
45
25
TYP
MAX
UNIT
V
V
V
V
V
BV
CES
Ic=0.1mA, V
BE
=0
50
30
5
2
2
100
60
100
100
630
0.7
BV
EBO
I
CES
I
E
=0.1mA, Ic=0
V
CE
=45V, I
B
=0
V
CE
=25V, I
B
=0
V
CE
=1V, Ic=100mA
V
CE
=1V, Ic=300mA
Ic=500mA, I
B
=50mA
nA
nA
h
FE1
h
FE2
V
CE
(sat)
V
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-039,B
1
2
