UTC 8050S
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The UTC8050S is a low voltage high current small signal
NPN transistor, designed for Class B push-pull audio
amplifier and general purpose applications.
1
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to UTC 8550S
1: EMITTER
2: COLLECTOR
TO-92
3: BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25擄C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25鈩?
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
VALUE
30
20
5
1
700
150
-65 ~ +150
UNIT
V
V
V
W
mA
擄C
擄C
ELECTRICAL CHARACTERISTICS
(Ta=25擄C,unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
hFE
1
hFE2
hFE3
V
CE
(sat)
V
BE
(sat)
V
BE
f
T
Cob
TEST CONDITIONS
Ic=100碌A(chǔ),I
E
=0
Ic=1mA,I
B
=0
I
E
=100碌A(chǔ),Ic=0
V
CB
=30V,I
E
=0
V
EB
=5V,Ic=0
V
CE
=1V,Ic=1mA
CE
=1V,Ic=150 mA
V
V
CE
=1V,Ic=500mA
Ic=500mA,I
B
=50mA
Ic=500mA,I
B
=50mA
V
CE
=1V,Ic=10mA
V
CE
=10V,Ic=50mA
V
CB
=10V,I
E
=0
f=1MHz
MIN
30
20
5
TYP
MAX
UNIT
V
V
V
uA
nA
1
100
100
120
40
110
400
0.5
1.2
1.0
100
9.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
V
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES
CO., LTD.
1
QW-R201-011,A
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