UTC 2SC2328A
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO POWER AMPLIFIER
FEATURES
*Collector Dissipation Pc=1 W
*3 W Output Application
*Complement of 2SA928A
1
TO-92NL
1: EMITTER
2: COLLECTOR
3: BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25擄C, unless otherwise specified)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
RATING
30
30
5
1
2
150
-55 ~ +150
UNIT
V
V
V
W
A
擄C
擄C
ELECTRICAL CHARACTERISTICS
(Ta=25擄C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain(note)
Base-emitter on voltage
Collector-emitter saturation voltage
Output capacitace
Current gain bandwidth product
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
BE
(on)
V
CE
(sat)
Cob
f
T
TEST CONDITIONS
Ic=100碌A(chǔ),I
E
=0
Ic=10mA,I
B
=0
I
E
=1mA,Ic=0
V
CB
=30V,I
E
=0
V
BE
=5V,Ic=0
V
CE
=2V,Ic=500mA
V
CE
=2V,Ic=500mA
Ic=1.5A,I
B
=0.03A
V
CB
=10V, I
E
=0,f=1MHz
V
CE
=2V,Ic=500mA
MIN
30
30
5
TYP
MAX
UNIT
V
V
V
nA
nA
V
V
pF
MHz
100
100
100
320
1
2
30
120
CLASSIFICATION OF hFE
RANK
RANGE
O
100-200
Y
160-320
UTC
UNISONIC TECHNOLOGIES
CO., LTD.
1
QW-R211-008,A
1
2
