UTC 2SC1815
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC NPN
TRANSISTOR
FEATURES
*Collector-Emitter voltage:
BV
CEO
=50V
*Collector current up to 150mA
* High hFE linearity
*complimentary to 2SA1015
1
TO-92
1:EMITTER 2:COLLECTOR 3. BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25擄C ,unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25擄C
)
Collector current
Base current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
I
B
T
j
T
STG
RATING
60
50
5
400
150
50
125
-55 ~ +150
UNIT
V
V
V
mW
mA
mA
擄C
擄C
ELECTRICAL CHARACTERISTICS
(Ta=25擄C,unless otherwise specified)
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain(note)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
Noise Figure
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
Cob
NF
Test conditions
V
CB
=60V,I
E
=0
V
EB
=5V,Ic=0
V
CE
=6V,Ic=2mA
V
CE
=6V,Ic=150mA
Ic=100mA,I
B
=10mA
Ic=100mA,I
B
=10mA
V
CE
=10V,Ic=50mA
V
CB
=10V,I
E
=0,f=1MHz
Ic=-0.1mA,V
CE
=6V
R
G
=10k鈩?f=100Hz
MIN
TYP
MAX
100
100
700
UNIT
nA
nA
70
25
0.1
80
2.0
1.0
0.25
1.0
3.0
1.0
V
V
MHz
pF
dB
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-006,A
1
2
