UTC 2SB834
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
Low frequency power amplifier applications.
1
TO-220
1:BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
( Operating temperature range applies unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Total Power Dissipation(Ta=25擄C
)
Collector current
Junction Temperature
Storage Temperature
Base Current
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
IB
RATING
60
60
7
30
3
150
-55 ~ +150
0.5
UNIT
V
V
V
W
A
擄C
擄C
A
ELECTRICAL CHARACTERISTICS
(Ta=25擄C,unless otherwise specified)
PARAMETER
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Collector-emitter on voltage
DC current gain
Current gain bandwidth product
SYMBOL
BV
CEO
I
CBO
I
EBO
V
CE(SAT)
V
CE(ON)
hFE1
hFE2
fT
TEST CONDITIONS
Ic=50mA
V
CB
=60V
V
EB
=7V
I
C
=3A,I
B
=0.3A
V
CE
=5V,I
C
=0.5A
I
C
=0.5A,V
CE
=5V
I
C
=3A,V
CE
=5V
V
CE
=5V,I
C
=0.5A
MIN
60
TYP
MAX
100
100
1
1
300
UNIT
V
碌A
碌A
V
V
0.7
60
20
9
MHZ
CLASSIFICATION of hFE1
RANK
RANGE
O
60-120
Y
100-200
GR
150-300
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R203-014,A
1
