UTC 2SA928A
PNP EPITAXIAL SILICON TRANSISTOR
AUDIO POWER AMPLIFIER
FEATURES
*Collector Dissipation Pc=1 W
*3 W Output Application
*Complement of 2SC2328A
1
TO-92NL
1: EMITTER
2: COLLECTOR
3: BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25擄C, unless otherwise specified)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
RATING
-30
-30
-5
1
-2
150
-55 ~ +150
UNIT
V
V
V
W
A
擄C
擄C
ELECTRICAL CHARACTERISTICS
(Ta=25擄C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain(note)
Base-emitter on voltage
Collector-emitter saturation voltage
Output capacitace
Current gain bandwidth product
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
BE
(on)
V
CE
(sat)
Cob
f
T
TEST CONDITIONS
Ic=-100碌A(chǔ),I
E
=0
Ic=-10mA,I
B
=0
I
E
=-1mA,Ic=0
V
CB
=-30V,I
E
=0
V
BE
=-5V,Ic=0
V
CE
=-2V,Ic=-500mA
V
CE
=-2V,Ic=-500mA
Ic=-1.5A,I
B
=-0.03A
V
CB
=-10V, I
E
=0,f=1MHz
V
CE
=-2V,Ic=-500mA
MIN
-30
-30
-5
TYP
MAX
UNIT
V
V
V
nA
nA
V
V
pF
MHz
100
-100
-100
320
-1
-2
48
120
CLASSIFICATION OF hFE
RANK
RANGE
O
100-200
Y
160-320
UTC
UNISONIC TECHNOLOGIES
CO., LTD.
1
QW-R211-009,A
1
2
