餂?/div>
UTRON
Rev. 1.3
UT62L25716(I)
256K X 16 BIT LOW POWER CMOS SRAM
REVISION HISTORY
REVISION
DESCRIPTION
Preliminary Rev. 0.5
Original.
Rev.1.0
1.Separate Industrial and Commercial SPEC.
2.New waveforms.
3.Add access time 55ns range.
4.The symbols CE1# and OE# and WE# are revised as. CE1 and
OE and
WE
.
Rev.1.1
1.Revised access time 55/70/100ns
-Rev 1.0: 55ns(max) for Vcc=3.0V~3.6V
70/100 ns(max) for Vcc=2.7V~3.6V
2.Revised 鈥淪YMBOL鈥?: CE1 CE
3.Revised ABSOLUTE MAXIMUM RATINGS
- V
TERM
: -0.3 to 4.6
-0.5 to 4.6V
- P
D :
1.0~1.5
1W
- I
OUT
: 50 20mA
4.Revised DC CHARACTERISTICS
- V
IH
: 2.0 2.2V
5.Revised AC CHARACTERISTICS
- t
OH
& t
BLZ
: 5 10ns
6.Revised 48-pin TFBGA package outline dimension錛?/div>
-ball diameter : 0.3mm
0.35mm
Rev.1.2
1. Revised Standby current (LL-Version) : 3uA(typ) 2uA(typ)
2. Revised operating current (Iccmax) : 45/35/25mA 40/30/25mA
3. Revised DC CHARACTERISTICS :
a. Operating Power Supply Current (Icc)
55ns (max) : 45 40mA
70ns (typ) : 25 20mA, 70ns (max) : 35 30mA
100ns (Typ) : 20 16mA
b. Standby current(CMOS) :
LL-version (typ) : 3 2uA, 25 20uA
Rev.1.3
1. Revised V
OH
(Typ) : NA 2.7V
2. Add V
IH
(max)=V
CC
+2.0V for pulse width less than 10ns.
V
IL
(min)=V
SS
-2.0V for pulse width less than 10ns.
3. Add order information for lead free product
Draft Date
Mar, 2001
Aug 7,2001
Nov 8 ,2002
Dec 3,2002
May 6,2003
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
P80046
1
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