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UT62L12816(I) Datasheet

  • UT62L12816(I)

  • ASYNCHRONOUS STATIC RAM- High Speed

  • 117.78KB

  • 13頁

  • ETC

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餂?/div>
UTRON
Rev. 1.1
UT62L12816(I)
128K X 16 BIT LOW POWER CMOS SRAM
REVISION HISTORY
REVISION
Preliminary Rev. 0.5
Preliminary Rev. 0.6
DESCRIPTION
Original.
1. The symbols CE# and OE# and WE# are revised as. CE
and OE and
WE
.
2. Separate Industrial and Consumer SPEC.
3. Add access time 55ns range.
1. Revised Vcc range錛?/div>
a銆?55ns (max.) for Vcc=2.7V~3.6V
b銆?70/100ns (max.) for Vcc=2.5V~3.6V
2. Revised block diagram
3. Revised DC ELECTRICAL CHARACTERISTICS錛?/div>
c銆?Revised standby current
I
SB1
=20/3uA(max.) for T
A
=0鈩儈50鈩?/div>
I
SB2
=80/10uA(max.) for T
A
=-40鈩儈85鈩?/div>
d銆?Revised Icc=35/30/25mA(max.)
4. Revised AC ELECTRICAL CHARACTERISTICS錛?/div>
e銆?Revised symbol name t
HZB
as t
BHZ
f銆?Revised symbol name t
LZB
as t
BLZ
g銆?Revised symbol name t
PWB
as t
BW
5. Revised waveforms
6. Revised I
DR
=50/5uA(max.)
1. Revised DC ELECTRICAL CHARACTERISTICS錛?/div>
a銆?Revised V
IH
as 2.2V
2. Revised AC ELECTRICAL CHARACTERISTICS錛?/div>
b銆?Revised t
BLZ
as 10ns (min.)
3. Revised 48-pin TFBGA package outline dimension錛?/div>
c銆?Rev. 0.7錛歜all diameter=0.3mm
d銆?Rev. 1.0錛歜all diameter=0.35mm
Add order information for lead free product
DATE
Mar, 2001
Jun 21,2001
Preliminary Rev. 0.7
Nov 6, 2001
Rev. 1.0
Apr 23,2002
Rev. 1.1
May 09,2003
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
P80049
1

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