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USF5G49 Datasheet

  • USF5G49

  • TOSHIBA Thyristor Silicon Planar Type

  • 6頁

  • TOSHIBA

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SF5G49,SF5J49,USF5G49,USF5J49
TOSHIBA Thyristor Silicon Planar Type
SF5G49,SF5J49,USF5G49,USF5J49
Medium Power Control Applications
路
路
路
Repetitive peak off-state voltage: V
DRM
= 400, 600 V
Repetitive peak reverse voltage: V
RRM
= 400, 600 V
Average on-state current: I
T (AV)
= 5 A
Gate trigger current: I
GT
= 70 碌A(chǔ) max
Unit: mm
Maximum Ratings
Characteristics
Repetitive peak off-state
voltage and Repetitive
peak reverse voltage
(R
GK
=
330
W)
Non-repetitive peak
reverse voltage
(non-repetitive
<
5 ms,
T
j
=
0~125擄C,
R
GK
=
330
W)
Average on-state current
R.M.S on-state current
Peak one cycle surge on-state current
(non-repetitive)
I
2
t limit value
Peak gate power dissipation
Average gate power dissipation
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Junction temperature
Storage temperature range
SF5G49
USF5G49
SF5J49
USF5J49
SF5G49
USF5G49
SF5J49
USF5J49
Symbol
Rating
400
V
600
500
V
RSM
720
I
T (AV)
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
5
7.8
65 (50 Hz)
20
0.5
0.05
5
-5
200
-40~125
-40~125
A
A
A
A
2
s
W
W
V
V
mA
擄C
擄C
V
Unit
V
DRM
V
RRM
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
13-7F1A
Weight: 0.36 g (typ.)
Note: Should be used with gate resistance as follows:
Anode
Gate
R
GK
<
330
W
=
Cathode
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
13-F2A
Weight: 0.28 g (typ.)
1
2002-02-05

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