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USF05G49 Datasheet

  • USF05G49

  • LOW POWER SWITCHING AND CONTROL APPLICATIONS

  • 6頁

  • TOSHIBA

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USF05G49
TOSHIBA THYRISTOR SILICON PLANAR TYPE
USF05G49
LOW POWER SWITCHING AND CONTROL
APPLICATIONS
Repetitive Peak Off鈭扴tate Voltage : V
DRM
= 400 V
Repetitive Peak Reverse Voltage
: V
RRM
= 400 V
Average On鈭扴tate Current
: I
T (AV)
= 500 mA
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak Off鈭扴tate Voltage
and Repetitive Peak Reverse
Voltage
Non-Repetitive Peak Reverse Voltage
(Non鈭扲epetitive<5ms, Tj = 0~125擄C)
Average On鈭扴tate Current
(Half Sine Waveform)
R.M.S On鈭扴tate Current
Peak One Cycle Surge On鈭扴tate
Current (Non鈭扲epetitive)
I t Limit Value
Critical Rate of Rise of On-State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
2
SYMBOL
V
DRM
V
RRM
V
RSM
I
T (AV)
I
T (RMS)
I
TSM
I t
di / dt
P
GM
P
G(AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
2
RATING
400
UNIT
V
500
500
800
9 (50Hz)
10 (60Hz)
0.4
10
0.1
0.01
3.5
鈭?
125
鈭?0~125
鈭?0~125
V
mA
mA
A
A s
A / 碌s
W
W
V
V
mA
擄C
擄C
2
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
13-5B1A
Weight: 0.2 g (typ.)
Note:
Should be used with
gate resistance as
shown below.
Note 1: di / dt Test condition: i
G
= 5mA, t
gw
= 10碌s, t
gr
鈮?50ns
MARKING
Part No. (or abbreviation code)
P
Lot No.
A
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-06

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