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Ultra low diode capacitance (1.2 pF max)
Two data lines (D+ and D-) protected against
15 kV ESD
Breakdown Voltage V
BR
= 6.0 V min
Flip-Chip 400 碌m pitch, lead-free
Very low leakage current
Very small PCB area
RoHS compliant
Flip-Chip
(4 Bumps)
Pin configuration (bump side)
A
B
1
2
Description
The USBULC6-2F3 is a monolithic, application
specific discrete device dedicated to ESD
protection of high speed interfaces.
Its ultra low line capacitance secures a high level
of signal integrity without compromizing the
protection of downstream sensitive chips against
the most stringently characterized ESD strikes.
Configuration
A1
B1
Benefits
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Minimized impact on rise and fall times for
maximum data integrity
Low PCB space occupation
Higher reliability offered by monolithic
integration
A2
B2
Note: B1 and B2 bumps must be
grounded on the PCB together
Complies with the following standards:
IEC 61000-4-2:
15 kV (air discharge)
8 kV (contact discharge)
MIL STD 883G - Method 3015.7
25 kV (Human body model)
Order code
Part Number
USBULC6-2F3
Marking
EH
TM: IPAD is a trademark of STMicroelectronics
December 2006
Rev 1
1/8
www.st.com
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