鈻?/div>
Full diode bridge with integrated clamping
protection
Breakdown voltage: V
BR
= 6 V min.
Peak pulse power dissipation: P
PP
= 500 W
(8/20 碌s)
Very low capacitance, compatible with high
debit data or signal rates.
Functional diagram
V
CC
I/O1
I/O2
GND
V
CC
I/O1
I/O2
GND
Description
In order to prevent fast transients from leading to
severe damages in a high speed data system, a
specific protection has been developed by
STMicroelectronics.
The
USB6B1
protects the two input lines against
overvoltage. Besides, this device also keeps the
power rails in a safe limit thanks to the integrated
Transil diode.
Complies with the following standards:
MIL STD 883C - Method 3015-6
class 3
C = 100 pF
R = 1500
鈩?/div>
Benefits
鈻?/div>
鈻?/div>
鈻?/div>
鈻?/div>
Provides protection for each line and between
the supply voltage and GND: 25 A, 8/20 碌s.
High ESD protection level: up to level 3 per MIL
STD 883C-Method 3015-6
Separated inputs and outputs (so-called 4-point
structure) to improve ESD susceptibility.
Comprehensive package pin-out for immediate
implementation.
3 positive strikes and 3 negative strikes (F = 1 Hz)
IEC 61000-4-2 level 4
15 kV (air discharge)
8 kV (contact discharge)
August 2006
Rev 10
1/9
www.st.com
9
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