US6X4
Transistors
Low frequency amplifier
US6X4
Application
Low frequency amplifier
Driver
External dimensions
(Unit : mm)
(4)
(3)
0.3
1.3
(5)
(6)
(2)
(1)
0.65 0.65
0.77
0~0.1
Features
1) A collector current is large.
2) V
CE(sat)
: max. 370mV
At lc=1.5A / l
B
=75mA
0.2
1.7
2.1
0.2
1pin mark
0.15Max.
ROHM : TUMT6
Abbreviated symbol : X04
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emiter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperautre
Equivalent circuit
Unit
V
V
V
A
A
鈭?
mW
鈭?
W
鈭?
擄C
擄C
(6)
(5)
(4)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
30
30
6
2
4
400
1.0
150
鈭?5
to
+150
0.85Max.
0.17
2.0
(1)
(2)
(3)
鈭?
Single pluse, Pw=1ms
鈭?
Each Terminal Mounted on a Recommended Land Pattern
鈭?
Mounted on a 25mm脳25mm脳
t
0.8mm ceramic substrate
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltae
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
鈭?/div>
Pulsed
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
30
30
6
鈭?/div>
鈭?/div>
鈭?/div>
270
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
180
鈭?/div>
280
20
Max.
鈭?/div>
鈭?/div>
鈭?/div>
100
100
370
680
鈭?/div>
鈭?/div>
Unit
V
V
V
nA
nA
mV
鈭?/div>
MHz
pF
Conditions
I
C
=10碌A(chǔ)
I
C
=1mA
I
E
=10碌A(chǔ)
V
CB
=30V
V
EB
=6V
I
C
=1.5A,
I
B
=75mA
V
CE
=2V,
I
C
=200mA
鈭?/div>
V
CE
=2V,
I
E
=鈭?00mA,
f=100MHz
鈭?/div>
V
CB
=10V,
I
E
=0A,
f=1MHz
Rev.A
1/2
US6X4相關(guān)型號(hào)PDF文件下載
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