1) Collector current is large.
2) Collector saturation voltage is low.
鈮?/div>
鈭?50mV
At I
C
=
鈭?00mA
/ I
B
=
鈭?5mA
0.2
1.7
2.1
0.2
1pin mark
0~0.1
0.15Max.
ROHM : TUMT6
Abbreviated symbol : T09
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
Unit
鈭?0
V
鈭?0
V
鈭?
V
鈭?
A
鈭?
鈭?
A
400
mW/TOTAL
鈭?
1.0
W/TOTAL
鈭?
0.7
WELEMENT
鈭?
150
擄C
鈭?5
to
+150
擄C
Equivalent circuit
(6)
(5)
(4)
Power dissipation
Junction temperature
Range of storage temperature
(1)
(2)
(3)
鈭?
Single pulse, P
W
=1ms
鈭?
Each Terminal Mounted on a Recommended
鈭?
Mounted on a 25mm脳25mm脳
t
0.8mm Ceramic substrate
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
鈭?/div>
Pulsed
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
鈭?0
鈭?0
鈭?
鈭?/div>
鈭?/div>
鈭?/div>
270
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?50
鈭?/div>
320
7
Max.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?00
鈭?00
鈭?50
680
鈭?/div>
鈭?/div>
Unit
V
V
V
nA
nA
mV
鈭?/div>
MHz
pF
Conditions
I
C
=鈭?0碌A(chǔ)
I
C
=鈭?mA
I
E
=鈭?0碌A(chǔ)
V
CB
=鈭?0V
V
EB
=鈭?V
I
C
=鈭?00mA,
I
B
=鈭?5mA
V
CE
=鈭?V,
I
C
=鈭?00mA
鈭?/div>
V
CE
=鈭?V,
I
E
=100mA,
f=100MHz
V
CB
=鈭?0V,
I
E
=0A,
f=1MHz
0.85Max.
0.17
0.77
2.0
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