SHANGHAI SUNRISE ELECTRONICS CO., LTD.
US1AB THRU US1MB
SURFACE MOUNT ULTRA
FAST SWITCHING RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
FEATURES
鈥?Ideal for surface mount pick and
place application
鈥?Low profile package
鈥?Built-in strain relief
鈥?High surge capability
鈥?Glass passivated chip
鈥?Ultra fast recovery for high efficiency
鈥?High temperature soldering guaranteed:
260
o
C/10sec/at terminal
TECHNICAL
SPECIFICATION
SMB/DO-214AA
B
A
C
D
F
G
A
.155(3.94)
.130(3.30)
E
.220(5.59)
.205(5.21)
B
.180(4.57)
.160(4.06)
F
.096(2.44)
.084(2.13)
H
C
D
.083(2.11) .012(0.305)
.077(1.96) .006(0.152)
G
H
.008(0.203) .060(1.52)
.004(0.102) .030(0.76)
MECHANICAL DATA
鈥?Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
鈥?Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
鈥?Polarity: Color band denotes cathode
MAX.
MIN.
MAX.
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T
L
=100
o
C)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
o
Maximum DC Reverse Current
T
a
=25 C
o
(at rated DC blocking voltage)
T
a
=100 C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
US1 US1 US1 US1 US1 US1 US1
UNITS
AB BB DB GB JB KB MB
50
100 200 400 600 800 1000
V
35
70
140 280 420 560 700
V
50
100 200 400 600 800 1000
V
1.0
30
1.0
1.4
5.0
200
75
10
o
A
A
1.7
V
碌A(chǔ)
碌A(chǔ)
nS
pF
C/W
o
C
50
Maximum Reverse Recovery Time
(Note 1)
trr
20
C
J
Typical Junction Capacitance
(Note 2)
32
R
胃
(ja)
Typical Thermal Resistance
(Note 3)
-50 to +150
T
STG
,T
J
Storage and Operation Junction Temperature
Note:
1.Reverse recovery condition I
F
=0.5A, I
R
=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0V
dc
3.Thermal resistance from junction to terminal mounted on 5脳5mm copper pad area
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