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URSF05G49-3P Datasheet

  • URSF05G49-3P

  • TOSHIBA THYRISTOR SILICON PLANAR TYPE

  • 6頁(yè)

  • TOSHIBA

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URSF05G49-1P,URSF05G49-3P,URSF05G49-5P
TOSHIBA THYRISTOR SILICON PLANAR TYPE
URSF05G49-1P,URSF05G49-3P,URSF05G49-5P
LOW POWER SWITCHING AND CONTROL
APPLICATIONS
l
Repetitive Peak Off鈭扴tate Voltage : V
DRM
= 400V
Repetitive Peak Reverse Voltage : V
RRM
= 400V
l
Average On鈭扴tate Current
: I
T (AV)
= 500mA
l
Reduce a Quantity of Parts and Manufacturing
Process Because of Built鈭抜n RGK : R
GK
=
1k鈩?
2.7k鈩? 5.1k鈩?(Typ.)
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak Off鈭扴tate Voltage
and Repetitive Peak Reverse Voltage
Non鈭扲epetitive Peak Reverse
Voltage (Non鈭扲epetitive<5ms,
Tj = 0~125擄C)
Average On鈭扴tate Current
(Half Sine Waveform)
R.M.S On鈭扴tate Current
Peak One Cycle Surge On鈭扴tate
Current (Non鈭扲epetitive)
I t Limit Value
Critical Rate of Rise of On鈭扴tate
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
2
SYMBOL
V
DRM
V
RRM
V
RSM
I
T (AV)
I
T (RMS)
I
TSM
I t
di / dt
P
GM
P
G(AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
2
RATINGS
400
UNIT
V
500
V
500
800
9 (50Hz)
10 (60Hz)
0.4
10
0.1
0.01
3.5
鈭?
125
鈭?0~125
鈭?0~125
mA
mA
A
A s
A / 碌s
W
W
V
V
mA
擄C
擄C
2
JEDEC
JEITA
TOSHIBA
Weight: 0.2 g
鈥?/div>
鈥?/div>
13鈭?B1A
EQUIVALENT CIRCUIT
NOTE 1: di / dt Test condition
i
G
= 5mA, t
gw
=10碌s,
t
gr
鈮?50ns
1
2001-07-11

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