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UPG110P Datasheet

  • UPG110P

  • 2 to 8 GHz WIDE BAND AMPLIFIER CHIP

  • 8頁

  • NEC   NEC

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DATA SHEET
GaAs INTEGRATED CIRCUIT
碌
PG110P
2 to 8 GHz WIDE BAND AMPLIFIER CHIP
DESCRIPTION
The
碌
PG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And
the device is available in chip form. The
碌
PG110P is suitable for the gain stage required high gain characteristic of
the microwave communication system and the measurement equipment.
FEATURES
鈥?Ultra wide band : 2 to 8 GHz
鈥?High Power Gain : G
P
= 15 dB TYP.
鈥?Medium Power
@f = 2 to 8 GHz
: P
O(1 dB)
= +14 dBm TYP. @f = 2 to 8 GHz
ORDERING INFORMATION
PART NUMBER
FORM
Chip
碌
PG110P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
Supply Voltage
Input Voltage
Input Power
Total Power Dissipation
Operating Temperature
Storage Temperature
V
DD
V
IN
P
in
P
tot
*
1
T
opr
*
2
T
stg
+10
鈥? to +0.6
+10
1.5
鈥?5 to +125
鈥?5 to +125
V
V
dBm
W
擄C
擄C
*1
Mounted with AuSn hard solder
*2
The temperature of base material beside the chip
RECOMMENDED OPERATING CONDITIONS (T
A
= 25
擄
C)
Supply Voltage
Input Power
V
DD
P
in
+8
鹵
0.2
鈥?
V
dBm
Document No. P11882EJ2V0DS00 (2nd edition)
(Previous No. ID-2454)
Date Published September 1996 P
Printed in Japan
漏
1989

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