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UPD46128512-X Datasheet

  • UPD46128512-X

  • 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDE...

  • 82頁(yè)

  • NEC   NEC

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PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
渭
PD46128512-X
128M-BIT CMOS MOBILE SPECIFIED RAM
8M-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The
渭
PD46128512-X is a high speed, low power, 134,217,728 bits (8,388,608 words by 16 bits) CMOS Mobile
Specified RAM featuring asynchronous page read and random write, synchronous burst read/write function.
The
渭
PD46128512-X is fabricated with advanced CMOS technology using one-transistor memory cell.
Features
鈥?/div>
8,388,608 words by 16 bits organization
鈥?/div>
Asynchronous page read mode
鈥?/div>
Synchronous read and write mode
鈥?/div>
Burst length: 8 words / 16 words / continuous
鈥?/div>
Clock latency: 5, 6, 7, 8, 9, 10
鈥?/div>
Burst sequence: Linear burst
鈥?/div>
Max clock frequency: 108/83 MHz
鈥?/div>
Byte data control: /LB (DQ0 to DQ7), /UB (DQ8 to DQ15)
鈥?/div>
Low voltage operation: 1.7 to 2.0 V
鈥?/div>
Operating ambient temperature: T
A
=
鈭?0
to
+85
擄C
鈥?/div>
Chip Enable input: /CE1 pin
鈥?/div>
Standby Mode input: CE2 pin
鈥?/div>
Standby Mode 1: Normal standby (Memory cell data hold valid)
鈥?/div>
Standby Mode 2: Density of memory cell data hold is variable
渭
PD46128512
Clock
frequency
MHz
(MAX.)
Asynchronous Operating
initial access
time
ns
(MAX.)
supply
voltage
V
Operating
ambient
temperature
擄C
At operating
mA
(MAX.)
(MAX.)
Density of data hold
128M 32M
bits
-E9X
Note
Note
Supply current
At standby
渭
A
(TYP.)
Density of data hold
0M
bits
65
128M 32M
bits
80
bits
16M
bits
8M
bits
0M
bits
15
16M
bits
8M
bits
bits
108
70
85
1.7 to 2.0
鈭?0
to
+85
60
50
60
50
250 T.B.D. T.B.D. T.B.D.
T.B.D. T.B.D. T.B.D.
-E10X
-E11X
-E12X
83
70
85
Note
Under consideration
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M17507EJ2V0DS00 (2nd edition)
Date Published September 2005 CP (K)
Printed in Japan
The mark
shows major revised points.
2005

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