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UPD444016-Y Datasheet

  • UPD444016-Y

  • 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATU...

  • 87.30KB

  • 16頁(yè)

  • NEC   NEC

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PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
碌
PD444016-Y
4M-BIT CMOS FAST SRAM
256K-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The
碌
PD444016-Y is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
Operating supply voltage is 5.0 V
鹵
0.5 V.
The
碌
PD444016-Y is packaged in 44-PIN PLASTIC TSOP (II).
Features
鈥?/div>
262,144 words by 16 bits organization
鈥?/div>
Fast access time : 8, 10, 12 ns (MAX.)
鈥?/div>
Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
鈥?/div>
Output Enable input for easy application
鈥?/div>
Single +5.0 V power supply
Ordering Information
Part number
Package
Access time
ns (MAX.)
Supply current mA (MAX.)
At operating
220
200
190
At standby
10
碌
PD444016G5-8Y-7JF
碌
PD444016G5-10Y-7JF
碌
PD444016G5-12Y-7JF
44-PIN PLASTIC TSOP (II)
(10.16 mm (400))
(Normal bent)
8
10
12
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M15391EJ1V0DS00 (1st edition)
Date Published February 2001 NS CP(K)
Printed in Japan
漏
2001

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