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UPD444004G5-8-7JD Datasheet

  • UPD444004G5-8-7JD

  • x4 SRAM

  • 93.69KB

  • 16頁

  • ETC

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DATA SHEET
MOS INTEGRATED CIRCUIT
碌
PD444004
4M-BIT CMOS FAST SRAM
1M-WORD BY 4-BIT
Description
The
碌
PD444004 is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM.
Operating supply voltage is 5.0 V
鹵
0.5 V.
The
碌
PD444004 is packaged in a 32-pin plastic SOJ and 32-pin plastic TSOP (II).
Features
鈥?/div>
1,048,576 words by 4 bits organization
鈥?/div>
Fast access time : 8, 10, 12 ns (MAX.)
鈥?/div>
Output Enable input for easy application
鈥?/div>
Single +5.0 V power supply
Ordering Information
Part number
Package
Access time
ns (MAX.)
Supply current mA (MAX.)
At operating
190
170
160
190
170
160
At standby
10
碌
PD444004LE-8
碌
PD444004LE-10
碌
PD444004LE-12
32-pin plastic SOJ
(10.16 mm (400))
8
10
12
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
碌
PD444004G5-8-7JD
Note
碌
PD444004G5-10-7JD
Note
碌
PD444004G5-12-7JD
Note
32-pin plastic TSOP (II)
(10.16 mm (400))
(Normal bent)
8
10
12
Note
Under development
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14426EJ3V0DS00 (3rd edition)
Date Published January 2001 NS CP(K)
Printed in Japan
The mark
鈥?/div>
shows major revised points.
漏
1999

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