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UPC8152TA-E3 Datasheet

  • UPC8152TA-E3

  • SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TE...

  • 16頁(yè)

  • NEC   NEC

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PRELIMINARY DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
P
PC8128TA,
P
PC8151TA,
P
PC8152TA
SILICON MMIC LOW CURRENT AMPLIFIERS
FOR CELLULAR/CORDLESS TELEPHONES
DESCRIPTION
The
P
PC8128TA,
P
PC8151TA and
P
PC8152TA are silicon monolithic integrated circuits designed as buffer
amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip
inductor (example: 1005 size) which can not be realized on internal 50
:
wideband matched IC. These low current
amplifiers operate on 3.0 V.
These ICs are manufactured using NEC鈥檚 20 GHz f
T
NESAT鈩?III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.
FEATURES
鈥?Low current consumption
:
P
PC8128TA
; I
CC
= 2.8 mA TYP. @ V
CC
= 3.0 V
; I
CC
= 4.2 mA TYP. @ V
CC
= 3.0 V
; I
CC
= 5.6 mA TYP. @ V
CC
= 3.0 V
; P
O (1 dB)
=
冒4.0
dBm TYP. @ f = 1 GHz
; P
O (1 dB)
= +2.5 dBm TYP. @ f = 1 GHz
; P
O (1 dB)
=
冒4.5
dBm TYP. @ f = 1 GHz
; G
P
= 23.0 dB TYP. @ f = 1 GHz
; ISL = 39 dB TYP. @ f = 1 GHz
; ISL = 38 dB TYP. @ f = 1 GHz
; ISL = 40 dB TYP. @ f = 1 GHz
P
PC8151TA
P
PC8152TA
鈥?Supply voltage
鈥?High efficiency
: V
CC
= 2.4 to 3.3 V
:
P
PC8128TA
P
PC8151TA
P
PC8152TA
鈥?Power gain variation
鈥?Operating frequency
鈥?Excellent isolation
:
P
PC8128TA, 8151TA ; G
P
= 12.5 dB TYP. @ f = 1 GHz
P
PC8152TA
:
P
PC8128TA
:
P
PC8151TA
:
P
PC8152TA
: 100 to 1 900 MHz (Output port LC matching)
APPLICATION
鈥?Buffer Amplifiers on 800 to 1 900 MHz cellular / cordless telephones
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14637EJ1V0DS00 (1st edition)
Date Published April 2000 N CP(K)
Printed in Japan
漏
2000

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