3 V SILICON MMIC L-BAND
FREQUENCY DOWN CONVERTER
FEATURES
鈥?BROADBAND OPERATION:
RF Input: 800 - 2000 MHz
IF Output: 100 - 300 MHz
鈥?INPUT IP
3
:
-7 dBm
鈥?LOW VOLTAGE OPERATION:
2.7~3.3 V
鈥?LOW CURRENT CONSUMPTION:
8.5 mA
鈥?POWER SAVE FUNCTION
鈥?SUPER SMALL T06 PACKAGE
鈥?TAPE AND REEL PACKAGING OPTION AVAILABLE
LO
Input
V
CC
UPC8112T
INTERNAL BLOCK DIAGRAM
RF
Input
IF
Output
POWER
SAVE
GND
DESCRIPTION
The UPC8112T is a silicon Monolithic Microwave Integrated
Circuit which is manufactured using the NESAT III process.
The NESAT III process produces transistors with f
T
approach-
ing 20 GHz. This device consists of a double balance mixer, an
IF amplifier, and a LO buffer amplifier. The device was de-
signed to be used as the first down converter for GPS and
wireless communications such as cellular, PCS, and 900 MHz
cordless phones. Operating on a 3 volt supply, this IC is ideally
suited for hand held portable designs.
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
擄C,
V
CC
= V
PS
= 3.0 V, P
LOin
= -10 dBm, Z
L
= Z
S
= 50
鈩?/div>
unless otherwise specified )
SYMBOLS
I
CC
I
CC (PS)
f
RFin
f
IFout
CG
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Circuit Current (no input signal)
Circuit Current at Power Save Mode, V
CC
= 3.0 V, V
PS
= 0.5 V
RF Frequency Response
IF Frequency Response
1
Conversion Gain
f
RFin
= 900 MHz, f
LOin
= 1000 MHz
f
RFin
= 1.5 GHz, f
LOin
= 1.6 GHz
f
RFin
= 1.9 GHz, f
LOin
= 1.66 GHz
Single Side Band Noise Figure (SSB)
f
RFin
= 900 MHz, f
LOin
= 1000 MHz
f
RFin
= 1.5 GHz, f
LOin
= 1.6 GHz
f
RFin
= 1.9 GHz, f
LOin
= 1.66 GHz
Output Power at 1 dB gain compression, f
RFin
= 1.9 GHz
f
LOin
= 1.66 GHz
Saturated Output Power
f
RFin
= 900 MHz, f
LOin
= 1000 MHz
f
RFin
= 1.9 GHz, f
LOin
= 1.66 GHz
(P
RFin
= -10 dBm)
Input 3rd Order Intercept Point,
f
RFIN
= 900 MHz, f
LOIN
= 1000 MHz
f
RFin
= 1.5 GHz, f
LOin
= 1.6 GHz
f
RFin
= 1.9 GHz, f
LOin
= 1.66 GHz
LO Leakage at RF pin, f
RF
in = 900 MHz, f
LO
in = 1000 MHz
f
RFin
= 1.5 GHz, f
LOin
= 1.6 GHz
f
RF
in = 1.9 GHz, f
LO
in = 1.66 GHz
LO Leakage at IF pin, f
RF
in = 900 MHz, f
LO
in = 1000 MHz
f
RFin
= 1.5 GHz, f
LOin
= 1.6 GHz
f
RF
in = 1.9 GHz, f
LO
in = 1.66 GHz
RF Leakage at LO Pin f
RF
in = 900 MHz, f
LO
in = 1000 MHz
2
f
RFin
= 1.5 GHz, f
LOin
= 1.6 GHz
2
f
RF
in = 1.9 GHz, f
LO
in = 1.66 GHz
2
2. P
RFin
= -30 dBm
UNITS
mA
碌A(chǔ)
GHz
MHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
MIN
4.9
0.8
100
11.5
9.5
UPC8112T
T06
TYP
8.5
1.9
250
15
13
13
9.0
11
11.2
-5
-2.5
-3
MAX
11.7
0.1
2.0
300
17.5
15.5
11
13.2
NF
P
1dB
P
SAT
-6.5
-7
IIP
3
LO
RF
LO
IF
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
-10
-9
-7
-45
-46
-45
-32
-33
-30
-80
-57
-55
RF
LO
Notes:
1. External matching required.
California Eastern Laboratories
1
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