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PRELIMINARY DATA SHEET

SILICON TRANSISTOR

碌

PA805T

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ELEMENTS) MINI MOLD

FEATURES

鈥?Low Noise, High Gain

鈥?Operable at Low Voltage

鈥?Small Feed-back Capacitance

C

re

= 0.3 pF TYP.

鈥?Built-in 2 Transistors (2

脳

2SC4958)

PACKAGE DRAWINGS

(Unit: mm)

2.1鹵0.1

1.25鹵0.1

0.65 0.65

2.0鹵0.2

1.3

2

ORDERING INFORMATION

PART NUMBER

QUANTITY

Loose products

(50 PCS)

PACKING STYLE

3

碌

PA805T-T1

Taping products

(3 KPCS/Reel)

Remark

If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

PIN CONFIGURATION (Top View)

ABSOLUTE MAXIMUM RATINGS (T

A

= 25

擄C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

T

RATING

9

6

2

10

60 in 1 element

120 in 2 elements

Note

150

鈥?5 to +150

UNIT

V

V

V

mA

mW

6

Q

1

5

0~0.1

4

Q

2

1

2

3

PIN CONNECTIONS

1. Collector (Q1)

4. Emitter (Q2)

2. Emitter (Q1)

5. Base (Q2)

3. Collector (Q2)

6. Base (Q1)

Junction Temperature

Storage Temperature

T

j

T

stg

藲C

藲C

Note

110 mW must not be exceeded in 1 element.

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

The information in this document is subject to change without notice.

Document No. ID-3639

(O.D. No. ID-9146)

Date Published April 1995 P

Printed in Japan

漏

0.15

鈥?

Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)

face to perforation side of the tape.

0.9鹵0.1

碌

PA805T

Embossed tape 8 mm wide. Pin 6 (Q1

0.7

4

5

+0.1

0.2

鈥?

1

6

+0.1

X Y

1995

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