3 V, 1900 MHz
LOW NOISE SI MMIC AMPLIFIER
FEATURES
鈥?16 dB GAIN WITH 4 dB NOISE FIGURE AT 1900 MHz
鈥?LOW VOLTAGE - LOW CURRENT:
6 mA at 3 V
鈥?LOW POWER CONSUMPTION:
18 mW TYP
鈥?SUPER SMALL PACKAGE
Gain, G
S
(dB)
18
UPC2749T
NOISE FIGURE AND
GAIN vs. FREQUENCY
V
CC
= 3.0 V
4.5
鈥?TAPE AND REEL PACKAGING OPTION AVAILABLE
G
S
14
3.5
12
NF
3.0
DESCRIPTION
The UPC2749T is a Silicon Monolithic integrated circuit which
is manufactured using the NESAT III process. The NESAT III
process produces transistors with f
T
approaching 20 GHz.
This amplifier was designed for buffer amplifier applications in
GPS and PCS applications. Operating on a 3 volt supply this
IC is ideally suited for hand-held, portable designs.
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
10
2.5
0
1000
2000
3000
Frequency, f (MHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C, Z
L
= Z
S
= 50鈩? V
CC
= 3.0 V)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
S
f
U1
P
1dB
P
SAT
NF
RL
IN
RL
OUT
ISOL
OIP
3
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
Small Signal Gain,
f = 900 MHz
f = 1900 MHz
UNITS
mA
dB
dB
GHz
dBm
dBm
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
擄C/W
擄C/W
7
9.5
25
-9
MIN
4
13
2.5
UPC2749T
TO6
TYP
6
14.5
16
2.9
-12.5
-6
3.2
4.0
10
12.5
30
-3
-3
-3.5
-4
620
230
5.5
MAX
8
18.5
Upper Limit Operating Frequency
1 dB Compressed Output Power at 1900 MHz
Saturated Output Power,
Noise Figure,
Input Return Loss,
Output Return Loss,
Isolation,
f = 1900 MHz
f = 900 MHz
f = 1900 MHz
f = 1900 MHz
f = 1900 MHz
f = 1900 MHz
f
1
= 1000 MHz, f
2
= 1010 MHz
f1 = 1900 MHz, f2 = 1902 MHz
f
1
= 2000 MHz, f
2
= 2010 MHz
SSB Output Third Order Intercept,
f
1
= 500 MHz, f
2
= 510 MHz
R
TH (J-A)
Thermal Resistance (Junction to Ambient)
Free Air
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
Note:
1.The gain at f
U
is 3 dB down from the gain at 1900 MHz.
California Eastern Laboratories
Noise Figure, NF (dB)
16
4.0
NEC
1
2
3
4
