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TAPE AND REEL PACKAGING OPTION AVAILABLE
0
0
0.5
1.0
15
UPC2714T
UPC2715T
GAIN vs. FREQUENCY
20
UPC2715
Gain, G
S
(dB)
10
UPC2714
5
1.5
2.0
Frequency, f (GHz)
DESCRIPTION
The UPC2714T and UPC2715T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable for applications which require low
power consumption and wide frequency operation. They are
designed for low cost, low power consumption gain stages in
cellular radios, GPS receivers, and PCN applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C, f = 0.5 GHz, V
CC
= 3.4 V)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
S
f
U
鈭咷
S
P
SAT
NF
RL
IN
RL
OUT
ISOL
鈭咷
T
R
TH
PARAMETERS AND CONDITIONS
Circuit Current
Small Signal Gain
Upper Limit Operating Frequency
(The gain at f
U
is 3 dB down from the gain at 0.1 GHz)
Gain Flatness, f = 0.1~ 0.6 GHz
Saturated Output Power
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain-Temperature Coefficient
Thermal Resistance (Junction to Ambient)
UNITS
mA
dB
GHz
dB
dBm
dB
dB
dB
dB
dB/擄C
擄C/W
10
5
22
-10
MIN
3.3
8.5
1.4
UPC2714T
T06
TYP
4.5
11.5
1.8
鹵1.0
-7
5.0
13
8
27
+0.006
200
6.5
12
5
28
-9
MAX
5.7
15.5
MIN
3.3
16
0.9
UPC2715T
T06
TYP
4.5
19
1.2
鹵1.0
-6
4.5
17
8
33
+0.006
200
6.0
MAX
5.7
23
California Eastern Laboratories