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UPC1652G Datasheet

  • UPC1652G

  • SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPL...

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  • NEC   NEC

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DATA SHEET
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
碌
PC1652G
SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT
WIDE BAND AMPLIFIER
DESCRIPTION
The
碌
PC1652G is a silicon monolithic integrated circuit
especially designed as a wide band amplifier convering HF band
through UHF band.
INPUT
GND
GND
GND
PIN CONNECTIONS
1
2
3
4
8
7
6
5
GND
V
CC
V
CC
OUTPUT
FEATURES
鈥?Excellent frequency response : 1 200 MHz TYP. @ 3 dB down
鈥?High power gain : 18 dB TYP. @ f = 500 MHz
鈥?Low voltage operation : V
CC
= 5 V
鈥?SOP package
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
擄
C)
Supply Voltage
Total Power dissipation
Operating Ambient Temperature
Storage Temperature
V
CC
P
D
T
A
T
stg
7
440
鈭?0
to +75
鈭?0
to +125
V
mW
擄C
擄C
EQUIVALENT CIRCUIT
V
CC
ELECTRICAL CHARACTERISTICS (T
A
= +25
擄
C, V
CC
= 5 V)
CHARACTERISTIC
Circuit Current
Power Gain
Noise Figure
OUT
SYMBOL MIN. TYP. MAX. UNIT
I
CC
G
P
NF
BW
I
SO
錚
11
錚?/div>
錚
22
錚?/div>
P
O
15
16
20
18
5.5
1000 1200
23
17
12
3
26
20
15
5
25
20
6.5
mA
dB
dB
TEST CONDITIONS
No signals
f = 500 MHz
f = 500 MHz
Band Width
Isolation
MHz 3 dB down below flat gain
dB
dB
dB
f = 500 MHz
f = 500 MHz
f = 500 MHz
IN
Input Return Loss
Output Return Loss
Maximum Output Level
GND
dBm f = 500 MHz
NEC cannot assume any responsibility for any circuits shown or represent that
they are free from patent infringement
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12443EJ5V0DS00 (5th edition)
Date Published November 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
漏
1983, 1999

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