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UPA891TC Datasheet

  • UPA891TC

  • Discrete

  • 88.98KB

  • 16頁

  • ETC

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DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
碌
PA891TC
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUMER MINIMOLD
FEATURES
鈥?Built-in low phase distortion transistor suited for OSC operation
f
T
= 5.0 GHz TYP.,
錚
21e
錚?/div>
2
= 4.0 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
鈥?Built-in 2 transistors (2
脳
2SC5600)
鈥?Flat-lead 6-pin thin-type ultra super minimold package
BUILT-IN TRANSISTORS
Q1, Q2
3-pin thin-type ultra super minimold part No.
2SC5600
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
鈥?8 mm wide embossed taping
鈥?Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)
face the perforation side of the tape
碌
PA891TC
碌
PA891TC-T1
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25擄C)
擄
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
9
5.5
1.5
100
200 in 1 element
230 in 2 elements
150
鈭?5
to +150
Unit
V
V
V
mA
mW
擄C
擄C
T
j
T
stg
2
Note
Mounted on 1.08 cm
脳
1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15570EJ1V0DS00 (1st edition)
Date Published June 2001 NS CP(K)
Printed in Japan
漏
2001

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