UPA863TC Datasheet

IC型號：
UPA863TC
PDF描述：
Discrete
文件大小：
142.05KB
PDF頁數：
28頁
芯片廠家：
ETC

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上傳產品規(guī)格書

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DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

碌

PA863TC

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

鈥?Low voltage operation

鈥?2 different built-in transistors (2SC5436, 2SC5800)

Q1: High gain transistor suited for buffer applications

= 12.0 GHz TYP.,

錚

21e

錚?/div>

= 9.0 dB TYP. @ V

= 1 V, I

= 10 mA, f = 2 GHz

Q2: Low phase distortion transistor suited for OSC applications

= 4.5 GHz TYP.,

錚

21e

錚?/div>

= 4.0 dB TYP. @ V

= 1 V, I

= 5 mA, f = 2 GHz

鈥?Flat-lead 6-pin thin-type ultra super minimold package

BUILT-IN TRANSISTORS

3-pin thin-type ultra super minimold part No.

2SC5436

2SC5800

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

3 kpcs/reel

Supplying Form

鈥?8 mm wide embossed taping

鈥?Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)

face the perforation side of the tape

碌

PA863TC

碌

PA863TC-T1

Remark

To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15734EJ1V0DS00 (1st edition)

Date Published September 2001 NS CP(K)

Printed in Japan

漏

2001

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