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UPA861TC Datasheet

  • UPA861TC

  • Discrete

  • 28頁

  • ETC

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DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
碌
PA861TC
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
鈥?Low voltage operation
鈥?2 different built-in transistors (2SC5436, 2SC5786)
Q1: High-gain transistor
f
T
= 12.0 GHz TYP.,
錚
21e
錚?/div>
2
= 9.0 dB TYP. @ V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications
f
T
= 20.0 GHz TYP.,
錚
21e
錚?/div>
2
= 12.0 dB TYP. @ V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
NF = 1.4 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz, Z
S
= Z
opt
鈥?Flat-lead 6-pin thin-type ultra super minimold package
BUILT-IN TRANSISTORS
Q1
3-pin thin-type ultra super minimold part No.
2SC5436
Q2
2SC5786
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
鈥?8 mm wide embossed taping
鈥?Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)
face the perforation side of the tape
碌
PA861TC
碌
PA861TC-T1
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10049EJ01V0DS (1st edition)
Date Published November 2001 CP(K)
Printed in Japan
漏
NEC Compound Semiconductor Devices 2001

UPA861TC相關(guān)型號PDF文件下載

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  • 英文版
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  • 英文版
    TRANSISTOR ARRAY
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  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
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  • 英文版
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