鈥?/div>
5
4
PIN OUT
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
DESCRIPTION
The UPA831TC contains one NE856 and one NE681 NPN
high frequency silicon bipolar chip. NEC's new ultra small TC
package is ideal for all portable wireless applications where
reducing board space is a prime consideration. Each transistor
chip is independently mounted and easily configured for oscil-
lator/buffer amplifier and other applications.
0.55鹵0.05
0.11
+0.1
-0.05
Note: Pin 1 is the lower left most pin
as the package lettering is oriented
and read left to right.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Feedback Capacitance
2
at V
CB
= 3 V, l
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
GHz
pF
dB
dB
10
12
1.4
2.7
GHz
pF
dB
dB
碌A
碌A
70
4.5
7.0
0.9
7
UNITS
碌A
碌A
70
3.0
4.5
0.7
9
1.2
2.5
0.8
0.8
150
1.5
MIN
UPA831TC
TC
TYP
MAX
1
1
140
Q1
f
T
Cre
|S
21E
|
2
NF
I
CBO
I
EBO
h
FE
Q2
f
T
Cre
|S
21E
|
2
NF
Notes: 1. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
California Eastern Laboratories
CEL
1
2
