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UPA829TF Datasheet

  • UPA829TF

  • NPN SILICON HIGH FREQUENCY TRANSISTOR

  • 19.18KB

  • 1頁

  • NEC   NEC

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NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2.0 mm x 1.25 mm
LOW HEIGHT PROFILE:
Just 0.60 mm high
HIGH COLLECTOR CURRENT:
I
C
MAX = 100 mA
0.65
2.0
0.2
1.3
2
Q2
UPA829TF
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE TS06
2.1
0.1
1.25
0.1
Q1
DESCRIPTION
The UPA829TF contains two NE688 NPN high frequency
silicon bipolar chips. NEC's new low profile TF package is ideal
for all portable wireless applications where reducing compo-
nent height is a prime consideration. Each transistor chip is
independently mounted and easily configured for oscillator/
buffer amplifier and other applications.
1
6
0.22
- 0.05
(All Leads)
+0.10
5
3
4
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25擄C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
1 Die
2 Die
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
mW
擄C
擄C
RATINGS
9
6
2
100
110
200
150
-65 to +150
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
0 ~ 0.1
0.6
0.1
0.45
0.13
0.05
T
J
T
STG
Note: Pin 1 is the
lower left most pin as
the package lettering
is oriented and read
left to right.
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
NF
h
FE1
/h
FE2
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current
Feedback
Gain
1
at V
CE
= 1 V, I
C
= 3 mA
GHz
pF
dB
dB
0.85
at V
CB
= 1 V, I
E
= 0, f = 1 MHz
Gain Bandwidth at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Capacitance
2
Insertion Power Gain at V
CE
= 3 V, I
C
=20 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
h
FE
Ratio: h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
UNITS
碌A(chǔ)
碌A(chǔ)
80
110
9.0
0.75
6.5
1.5
0.85
MIN
UPA829TF
TS06
TYP
MAX
0.1
0.1
160
Notes: 1. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA829TF-T1, 3K per reel.
California Eastern Laboratories
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
鈥?Headquarters 鈥?4590 Patrick Henry Drive 鈥?Santa Clara, CA 95054-1817 鈥?(408) 988-3500 鈥?Telex 34-6393 鈥?FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) 鈥?Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
2/99

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