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UPA828TC Datasheet

  • UPA828TC

  • Discrete

  • 16頁

  • ETC

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DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
碌
PA828TC
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
鈥?Low phase distortion transistor suited for OSC applications
f
T
= 9.0 GHz TYP.,
錚
21e
錚?/div>
= 7.5 dB TYP. @ V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
2
NF = 1.3 dB @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
鈥?Built-in 2 transistors (2
脳
2SC5436)
鈥?Flat-lead 6-pin thin-type ultra super minimold package
BUILT-IN TRANSISTORS
Q1, Q2
3-pin thin-type ultra super minimold part No.
2SC5436
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
鈥?8 mm wide embossed taping
鈥?Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)
face the perforation side of the tape
碌
PA828TC
碌
PA828TC-T1
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10167EJ01V0DS (1st edition)
Date Published June 2002 CP(K)
Printed in Japan
錚?/div>
NEC Compound Semiconductor Devices 2002

UPA828TC相關(guān)型號PDF文件下載

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  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
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  • 英文版
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  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
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  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
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  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
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  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
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  • 英文版
    TRANSISTOR ARRAY
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC
  • 英文版
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