音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

UPA822TF Datasheet

  • UPA822TF

  • NPN SILICON HIGH FREQUENCY TRANSISTOR

  • 19.22KB

  • 1頁

  • NEC   NEC

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2.0 mm x 1.25 mm
LOW HEIGHT PROFILE:
Just 0.60 mm high
HIGH COLLECTOR CURRENT:
I
C
MAX = 65 mA
0.65
2.0
0.2
1.3
2
Q2
UPA822TF
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE TS06
(Top View)
2.1
0.1
1.25
0.1
Q1
DESCRIPTION
The UPA822TF contains two NE681 NPN high frequency
silicon bipolar chips. NEC's new low profile TF package is ideal
for all portable wireless applications where reducing compo-
nent height is a prime consideration. Each transistor chip is
independently mounted and easily configured for oscillator/
buffer amplifier and other applications.
1
6
0.22
- 0.05
(All Leads)
+0.10
5
3
4
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25擄C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
PT
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
1 Die
2 Die
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
mW
擄C
擄C
RATINGS
20
10
1.5
65
110
200
150
-65 to +150
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
0 ~ 0.1
0.6
0.1
0.45
0.13
0.05
T
J
T
STG
Note: Pin 1 is the
lower left most pin as
the package lettering
is oriented and read
left to right.
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
NF
h
FE1
/h
FE2
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain
1
at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
h
FE
Ratio: h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
GHz
pF
dB
dB
0.85
10
12
1.4
1.7
UNITS
碌A(chǔ)
碌A(chǔ)
70
4.5
100
7.0
0.9
MIN
UPA822TF
TS06
TYP
MAX
0.8
0.8
240
Notes: 1. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA822TF-T1, 3K per reel.
California Eastern Laboratories
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
鈥?Headquarters 鈥?4590 Patrick Henry Drive 鈥?Santa Clara, CA 95054-1817 鈥?(408) 988-3500 鈥?Telex 34-6393 鈥?FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) 鈥?Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
2/99

UPA822TF相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    UPA80C Data Sheet | Data Sheet[02/1982]
    ETC
  • 英文版
    UPA81C Data Sheet | Data Sheet[02/1982]
    ETC
  • 英文版
    UPA81C Data Sheet | Data Sheet[02/1982]
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI...
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 F...
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 F...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC
  • 英文版
    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...
    NEC [NEC]
  • 英文版
    TRANSISTOR ARRAY
    NEC [NEC]
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC
  • 英文版
    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 F...
    NEC [NEC]

掃碼下載APP,
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù):
賣家服務(wù):
技術(shù)客服:

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào),
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人:

聯(lián)系方式:

按住滑塊,拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見,您的參與是維庫提升服務(wù)的動(dòng)力!意見一經(jīng)采納,將有感恩紅包奉上哦!